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High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Xiang, Ruo Fei Fang, Y. Y. Dai, Jing Shu Zhang, Li Yu, Chenhui Xiong, Hailong Chen, Changjun Hao, Youwei |
| Copyright Year | 2011 |
| Abstract | The growth of GaN epilayers on AlN/Si (1 1 1) templates with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition (MOCVD) is reported in this work. The composition-graded AlxGa1−xN interlayer was achieved by simply changing the growth condition of AlN to that of GaN layers during a fixed time. The surface morphology, crystalline quality and stress of GaN films have been investigated with different AlxGa1−xN interlayer thickness, 280 nm, 460 nm, 575 nm, and 750 nm. It was found that the properties of GaN films are highly dependent on the AlxGa1−xN interlayer thickness. High quality crack-free GaN films up to 1.2m can be achieved with 460 nm thick AlxGa1−xN layer. |
| Starting Page | 2227 |
| Ending Page | 2231 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jallcom.2010.10.189 |
| Volume Number | 509 |
| Alternate Webpage(s) | https://www.xidian.edu.cn/hyjsktz/docs/20110517102001078409.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.jallcom.2010.10.189 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
