NDLI: Atomic Layer Deposition of Noble Metal Oxide and Noble Metal Thin Films

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Atomic Layer Deposition of Noble Metal Oxide and Noble Metal Thin Films

Content Provider	Semantic Scholar
Author	Hämäläinen, Jani
Copyright Year	2013
Abstract	Atomic layer deposition (ALD) is a chemical gas phase deposition method to grow thin films which are highly uniform and conformal over large and complex substrate areas. Film growth in ALD is precise, remarkably repeatable, and combined with unparalleled control of the film thickness. These inherent properties make ALD an attractive method to deposit thin films for advanced technological applications such as microelectronics and nanotechnology. One material group in ALD which has matured in ten years and proven to be of wide technological importance is noble metals. The purpose of this study was to investigate noble metal oxide film growth by ALD. The ALD of noble metal oxides has been very limited compared to the noble metal growth. Another aim was to examine noble metal film deposition at temperatures lower than required in the earlier ALD noble metal processes. In addition, the selection of noble metals that can be grown by ALD was expanded with osmium. The results of the study showed that oxides of iridium, rhodium, platinum, and palladium can be deposited from the common noble metal precursors using ozone as the reactant at temperatures below 200 C. The development of ozone-based ALD noble metal oxide processes led further on to the low temperature deposition of noble metals by adding a reductive molecular hydrogen step after every oxidative ozone step. The noble metal deposition via noble metal oxide growth was achieved at lower temperatures than required with the common oxygen-based ALD noble metal processes. Film growth rates, resistivities, purities, and surface roughnesses resulting from the studied noble metal oxide and noble metal processes were reasonable. The processes showed some shortcomings but offer an alternative thermal ALD pathway to deposit noble metals and noble metal oxides compared to the oxygen-based ALD processes.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://helda.helsinki.fi/bitstream/handle/10138/38952/hamalainen_dissertation.pdf?sequence=1
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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