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Formation Mechanism of Ge Nanocrystals Embedded in SiO 2 Studied by Fluorescence X-Ray Absorption Fine Structure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yan, Wensheng Li, Zhongrui Sun, Zhihu Kolobov, Alexander V. Wei, Shiqiang |
| Copyright Year | 2006 |
| Abstract | The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in asprepared sample permutated with Si in the wafer and formed Ge nanocrystals. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.slac.stanford.edu/econf/C060709/papers/241_THPO129.PDF |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Computed Tomography Scanning Systems Embedded system Embedding Fluorescence GE-600 series Greater Than or Equal To International System of Units Nanocrystalline Materials Oral Wafer Quartz Roentgen Rays Simulated annealing germanium dioxide |
| Content Type | Text |
| Resource Type | Article |
