Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation

Content Provider	Semantic Scholar
Author	Uchino, Tomohiro Ayre, Gilboa Smith, David Cameron Hutchison, John L. Groot, C. H. De Ashburna, P.
Copyright Year	2009
Abstract	This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of singlewalled carbon nanotubes SWNTs . The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 1.2 m in length/ m2 obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density. © 2009 The Electrochemical Society. DOI: 10.1149/1.3147248 All rights reserved.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://eprints.soton.ac.uk/144503/2/2009TakashiCNTsByGeImplantedNanoparticles.pdf
Alternate Webpage(s)	https://eprints.soton.ac.uk/272077/1/uchinok144.pdf
Language	English
Access Restriction	Open
Subject Keyword	Atomic-force microscopy CMOS Carbon Dioxide Carbon-Carbon Lyases Chemical vapor deposition Digital Object Identifier GE-600 series Germanium Greater Than or Equal To Ion implantation Microscopy, Atomic Force Nanocrystalline Materials Nanotubes Nanotubes, Carbon Particle Size Scanning Electron Microscopy Semiconductor Single-Walled Nanotube Transistor Vacuum deposition metal oxide
Content Type	Text
Resource Type	Article