Loading...
Please wait, while we are loading the content...
Similar Documents
Room Temperature Operation of Unipolar Hot Electron Transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Levi, A. F. J. Chiu, T. H. |
| Abstract | In this paper we discuss the kinematic and dynamical constrains involved in the design of useful unipolar hot electron transistors and we demonstrate room temperature operation of a double heterojunction hot electron transistor with a two-dimensional electron g~ forming the base region. Our test structure has the narrowest ever reported base width at a mere 100A and is the fi,'st such transistor to show current gain in excess of 10 at room temperature. The device uses an indirect, wide band gap AISb0 02As0 08 emitter and the transistor base is a thin InAs layer. KEYWORDS Room temperature operation of double hetcrojunction unipolar hot electron transistors; extreme nonequilibrium electron transport; kinematic and dynamlcal constraints on hot electron transport; InGaAsSb. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.usc.edu/dept/engineering/eleceng/Adv_Network_Tech/Html/publications/29.SSE(1988).pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Electron Transport Emitter Device Component Heterojunction Hot-carrier injection Lambert's cosine law Offset binary Transistor Transistors width |
| Content Type | Text |
| Resource Type | Article |
