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Light-emitting p + nn +-heterodiode with additional heterojunction in the n-base
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gribnikov, Z. S. Mitin, V. V. |
| Copyright Year | 1999 |
| Abstract | It is shown that a pnn-heterodiode with an additional nn-heterojunction in the n-base can be a very eective light-emitting phototransistor or transistor. A depletion layer of the new intermediate heterojunction splits the nbase into two new bases: wider bandgap phototransistor (transistor) base 1 and narrower bandgap light-emitter base 2. A coecient of light-to-light conversion (of an input light absorbed in base 1 into an output light emitted in base 2) can be very high due to very high phototransistor gain. Eects of avalanche multiplication in the depletion layer of the intermediate heterojunction, edge multiplication in an accumulation layer of the same junction and thermionic electron emission across a conduction band discontinuity barrier are taken into account. Various material systems appropriate for implementation of the considered device are discussed. # 1999 Elsevier Science Ltd. All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ee.buffalo.edu/faculty/mitin/Papers/139 |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Avalanches Base Binary number Depletion region Electron Emitter Device Component Heterojunction Lambert's cosine law Multiplication PNN gene Phototransistor Device Component Reflections of signals on conducting lines Transistor Tree accumulation |
| Content Type | Text |
| Resource Type | Article |
