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Memory effect of sol-gel derived V-doped SrZrO3 thin films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liu, Chih-Yi Chuang, Chun-Chieh Chen, Jian-Shian Wang, Arthur Jang, W. Y. Young, J. Chiu, Kuang-Yi Tseng, Tseung-Yuen |
| Copyright Year | 2006 |
| Abstract | Abstract V-doped SrZrO 3 (SZO) thin films on LaNiO 3 /SiO 2 /Si substrate are synthesized by sol–gel method to form metal–insulator–metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current–voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application. |
| Starting Page | 287 |
| Ending Page | 290 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2005.08.153 |
| Volume Number | 494 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/12748/1/000233785600053.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2005.08.153 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
