Loading...
Please wait, while we are loading the content...
Similar Documents
Resistive switching properties of sol–gel derived Mo-doped SrZrO3 thin films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lin, Chun-Chieh Huang, Chun-Hsing Lin, Chen-Hsi Tseng, Tseung-Yuen |
| Copyright Year | 2007 |
| Abstract | V-doped and undoped SrTiO3 (V:STO and STO) thin films on Pt/Ti/SiO2/Si substrates were synthesized using a sol–gel method to form metal–insulator–metal (MIM) structures. Coexistence of the bipolar and unipolar resistive switching (BRS and URS) modes in Pt/STO/Pt and Pt/V:STO/Pt structures was observed as a irreversible transition from BRS to URS on adjustment of the compliance current (I comp). Both states were stable and reproducible over 60 cycles, and the maximum operating voltage of the Pt/STO/Pt was reduced from 10 V to 2 V by doping with V. Linear fitting of current–voltage curves suggests that space-charge-limited leakage was the limiting leakage mechanism for these two devices. Based on these results, a switching mechanism based on filament theory is proposed to explain both resistive switching modes. |
| Starting Page | 1319 |
| Ending Page | 1322 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.surfcoat.2007.07.052 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/3674/1/000251618900129.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.surfcoat.2007.07.052 |
| Volume Number | 202 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
