NDLI: Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

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Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

Content Provider	Semantic Scholar
Author	Mikulics, M. Wu, Si-Chun Marso, Michel Adam, Roman Forster, Aaron M. Hart, A. Van Der Kordos, Peter Luth, Hanneke A. Sobolewski, Roman
Copyright Year	2006
Abstract	We have fabricated and characterized ultrafast metal-semiconductor-metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry.
Starting Page	820
Ending Page	822
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1109/LPT.2006.871696
Volume Number	18
Alternate Webpage(s)	http://juser.fz-juelich.de/record/50738/files/79363.pdf
Alternate Webpage(s)	https://doi.org/10.1109/LPT.2006.871696
Journal	IEEE Photonics Technology Letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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