Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs

Content Provider	Semantic Scholar
Author	Mikulics, M. Marso, Michel Kordos, Peter Stanček, S. Kovác, Peter Zheng, Xiuting Wu, Stephen Sobolewski, Roman
Copyright Year	2003
Abstract	We have fabricated and tested metal–semiconductor–metal (MSM) photodetectors based on nitrogen-ion-implanted GaAs. Nitrogen ions with energy of 700 and 880 keV, respectively, were implanted into epitaxial GaAs films at an ion concentration of 3×1012 cm−2. Ti/Au MSM photodetectors with 1-μm-wide fingers were fabricated on top of the implanted GaAs. In comparison to low-temperature-grown GaAs photodetectors, produced in parallel in identical MSM geometry, the 880 keV N+-implanted photodetectors exhibited almost two orders of magnitude lower dark current (10 nA at 1 V bias) and the responsivity more than doubled (>20 mA/W at 20 V bias). Illumination with 100-fs-wide, 810 nm wavelength laser pulses, generated ∼2.5-ps-wide photoresponse signals with amplitudes as high as 2 V. The 2.5 ps relaxation time was the same for both the ion-implanted and low-temperature-grown devices and was limited by the MSM capacitance time constant.
Starting Page	1719
Ending Page	1721
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1063/1.1606879
Volume Number	83
Alternate Webpage(s)	http://www.lle.rochester.edu/media/publications/lle_review/documents/v95/95_06Ultrafast.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.1606879
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article