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Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
| Content Provider | Semantic Scholar |
|---|---|
| Author | Makihara, Katsunori Ikeda, Mitsuhisa Murakami, Hideki Higashi, Seiichiro Miyazaki, Seiichi |
| Copyright Year | 2006 |
| Abstract | Phosphorous doping to Si quantum dots was performed by a pulse injection of 1% PH3 diluted with He during the dot formation on thermally grown SiO2 from thermal decomposition of pure SiH4, and electron charging to and discharging from P-doped Si dots were studied to characterize their electronic charged states using a Kelvin probe technique in atomic force microscopy (AFM). The potential change corresponding to the extraction of one electron from each of the P-doped Si dots was observed after applying a tip bias as low as +0.2 V while for undoped Si dots, with almost the same size as P-doped Si dots, almost the same amount of the potential change was detectable only when the tip bias was increased to ยจ1 V. It is likely that, for P-doped Si dots, the electron extraction from the conduction band occurs and results in a positively charged state with ionized P donor. D 2005 Elsevier B.V. All rights reserved. |
| Starting Page | 186 |
| Ending Page | 189 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Volume Number | 508 |
| Alternate Webpage(s) | http://www.rcns.hiroshima-u.ac.jp/21coe/21coe_result/pdf/proceedings/7.6.4-miyazaki.pdf |
| Alternate Webpage(s) | http://www.rcns.hiroshima-u.ac.jp/21coe/pdf/4th_WS/poster34-p100.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2005.07.352 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
