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Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelvin Probe Technique
| Content Provider | Semantic Scholar |
|---|---|
| Author | Darma, Yudi Takeuchi, Kohei Miyazaki, Seiichi |
| Copyright Year | 2003 |
| Abstract | Nanom eter dots consisting of S i clad and G e core have been prepared by alternately contro lling the selective growth conditions in LPCVD using pure SiH4 and GeH4 on 4nm -th ick SiO 2. The changes in surface potential induced by electron charging and discharging at each of iso lated dots have been m easured using AFM/Kelvin probe force m icroscopy (KFM ). In electron charging and discharging at a single dot, a Rh-coat AFM tip was electrica lly biased in the range of -3 to +3V and scanned on the sam ple surface in a tapping m ode. The Surface potential change confirm ed the in jected electron and hole are retained in the Si clad and the Ge core, respective ly, as expected from the band diagram for an Si/Ge/S i structure. Surface potentia l change on an isolated dot induced by electron in jection or extraction is decreased w ith increasing of the dot height. For the dot height of 16nm , a theoretical consideration confirm s the observed potential change is attributed for charging the dot by 3 electrons and 2-3 holes. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2003.E-3-3 |
| Alternate Webpage(s) | http://www.rcns.hiroshima-u.ac.jp/21coe/pdf/2nd_WS/Poster.18-P.162.PDF |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2003.E-3-3 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
