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Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dolgos, Denis Meier, Hektor Schenk, Andreas Witzigmann, Bernd |
| Copyright Year | 2011 |
| Abstract | The high-energy charge transport of electrons and holes in GaAs single photon avalanche diodes with multiplication region widths of 55 nm to 500 nm is investigated by means of the full-band Monte Carlo technique incorporating computationally efficient full-band phonon scattering rates. Compared to previous works, the solution of the Boltzmann transport equation and the incorporation of the full-band structure put the evaluation of the breakdown probability, the time to avalanche breakdown, and the jitter on deeper theoretical grounds. As a main result, the breakdown probability exhibits a steeper rise versus reverse bias for smaller multiplicator sizes. The time to avalanche breakdown and jitter decrease for smaller multiplicator widths. |
| Starting Page | 084507 |
| Ending Page | 084507 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3652844 |
| Volume Number | 110 |
| Alternate Webpage(s) | http://www.iis.ee.ethz.ch/~schenk/Dolgos2011.pdf |
| Alternate Webpage(s) | https://iis-people.ee.ethz.ch/~schenk/Dolgos2011.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3652844 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |