NDLI: Full-band Monte Carlo simulation of single photon avalanche diodes

Content Provider	IEEE Xplore Digital Library
Author	Dolgos, D. Meier, H. Schenk, A. Witzigmann, B.
Copyright Year	2013
Description	Author affiliation: Synopsys Switzerland LLC Zurich, Zurich, Switzerland (Dolgos, D.) \|\| Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland (Schenk, A.) \|\| Albis Optoelectron. AG, Rüschlikon, Switzerland (Meier, H.) \|\| Comput. Electron. & Photonics Group, Univ. of Kassel, Kassel, Germany (Witzigmann, B.)
Abstract	Single photon avalanche diodes (SPADs) enable a variety of innovative applications in the fields of biology, medicine, and physics. The propagation of single photons with optical fibers requires the usage of telecommunication wavelengths in the near infrared (NIR) spectral range. NIR SPADs, which can be employed for this application, consist of an absorber layer $(In_{0.53}Ga_{0.47}As)$ and a multiplication layer (InP or $In_{0.52}Al_{0.48}As).$ The product of the quantum efficiency $η_{q},$ the probability that the photoexcited carrier survives into the multiplier $P_{c},$ and the breakdown probability $P_{b}$ that the carrier activates a self-sustaining avalanche designate the photon detection efficiency [1] PDE = $η_{q}P_{c}P_{b}.$ The breakdown probability contributes primarily to the electric field dependence of the PDE and increases with the electric field. Therefore, a higher electric field enhances the photon detection efficiency. However, band-to-band or trap-assisted tunneling in the multiplication layer initiate dark counts and degrade the performance of SPAD devices at higher electric fields. Hence, to obtain a higher photon detection efficiency for a given increase of the electric field and tunneling rate, a steep rise of the breakdown probability with applied bias is favorable. The SPAD's timing jitter arises from various sources. The avalanche build-up time is the main contribution to the timing jitter [1].
Starting Page	360
Ending Page	361
File Size	75099
Page Count	2
File Format	PDF
e-ISBN	9781457715075
DOI	10.1109/IPCon.2013.6656586
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric breakdown Photonics Physics Monte Carlo methods Indium phosphide Computational modeling Lead
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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