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Paralleling High Speed GaN Transistors E ectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications EFFICIENT POWER CONVERSION
| Content Provider | Semantic Scholar |
|---|---|
| Author | Reusch, David |
| Copyright Year | 2016 |
| Abstract | Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon (Si) power MOSFETs. In this application note, we will discuss paralleling high speed GaN transistors in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose printed circuit board (PCB) layout methods to improve parallel performance of high speed GaN transistors. Four parallel half bridges in an optimized layout operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A single phase buck converter achieving e ciencies above 96.5% from 35% to 100% load will be demonstrated. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://epc-co.com/epc/Portals/0/epc/documents/application-notes/AN020%20Effectively%20Paralleling%20Enhancement%20Mode%20Gallium%20Nitride%20Transistors.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
