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High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhao, Yuji Tanaka, Shinichi Pan, Chih Chien Fujito, Kenji Feezell, Daniel F. Speck, James S. Denbaars, Steven P. Nakamura, Shuji |
| Copyright Year | 2011 |
| Abstract | We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (2021) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6 mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5 mW and 45.3%, respectively. |
| Starting Page | 082104 |
| Ending Page | 082104 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/APEX.4.082104 |
| Volume Number | 4 |
| Alternate Webpage(s) | http://faculty.engineering.asu.edu/zhao/wp-content/uploads/2014/08/2011-APEX-High-power-blue-violet-semipolar-20-2-1-InGaNGaN-light-emitting-diodes-with-low-efficiency-droop-at-200-Acm2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1143/APEX.4.082104 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |