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High-Power, Low-Efficiency-Droop Semipolar (20\bar{2}\bar{1}) Single-Quantum-Well Blue Light-Emitting Diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Pan, Chih-Chien Tanaka, Shinichi Wu, Feng Juan Zhao, Yuji Speck, James S. Nakamura, Shuji Baars, Steven Den Feezell, Daniel F. |
| Copyright Year | 2012 |
| Abstract | We demonstrate a small-area (0.1mm) semipolar (20 2 1) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400A/cm, respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence ( -EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer. # 2012 The Japan Society of Applied Physics |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://faculty.engineering.asu.edu/zhao/wp-content/uploads/2014/08/2012-APEX-High-power-low-efficiency-droop-semipolar-20-2-1-single-quantum-well-blue-light-emitting-diodes.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |