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Intrinsic optical anisotropy of (001)-grown short-period InAs/GaSb superlattices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Liang Peeters, François M. |
| Copyright Year | 2010 |
| Abstract | We theoretically investigate the intrinsic optical anisotropy or polarization induced by the microscopic interface asymmetry MIA in no-common-atom NCA InAs/GaSb superlattices SLs grown along the 001 direction. The eight-band K ·P model is used to calculate the electronic band structures and incorporates the MIA effect. A Boltzmann equation approach is employed to calculate the optical properties. We found that in NCA InAs/GaSb SLs, the MIA effect causes a large in-plane optical anisotropy for linearly polarized light and the largest anisotropy occurs for light polarized along the 110 and 11 ¯ 0 directions. The relative difference between the optical-absorption coefficient for 110-polarized light and that for 11 ¯ 0-polarized light is found to be larger than 50%. The dependence of the in-plane optical anisotropy on temperature, photoexcited carrier density, and layer width is examined in detail. This study is important for optical devices which require the polarization control and selectivity. |
| Starting Page | 235422 |
| Ending Page | 235422 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevB.82.235422 |
| Alternate Webpage(s) | http://theory.issp.ac.cn/publication/2010/co-authors/2010-lilonglong-02.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevB.82.235422 |
| Volume Number | 82 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
