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Low pressure chemical vapor deposition of silicon carbonitride films from tri(dimethylamino) silane
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shah, R. |
| Copyright Year | 1997 |
| Abstract | LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON CARBONITRIDE FILMS FROM TRI(DIMETHYLAMINO)SILANE by Rajive Shah A literature study to investigate the incorporation of silicon into SiC and Si3N4 films from various organosilanes was carried out. The Arrhenius activation energy for the synthesis of silicon, silicon carbide and silicon nitride films from various organosilanes range from 165-210 kJ/mol. A review of recent studies have indicated that silicon deposition is the rate determining step in the synthesis of silicon from silane. It is proposed here that this hypothesis can be established for the synthesis of silicon carbide, silicon nitride and silicon carbonitride film. Limited experiments indicated that the silicon deposition is a rate determining step in the deposition of silicon carbonitride films from tri(dimethylamino)silane (TDMAS). The deposition of Si-C-N film is found to be consistent with an activation energy of 175 kJ/mol in the temperature range of 650-750°C. The film composition, its refractive index, density, IR spectroscopy and the Young's Modulus is determined. A complete study on the deposition of silicon carbonitride film can be carried out for further conformance. LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON CARBONITRIDE FILMS FROM TRI(DIMETHYLAMINO)SILANE |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://digitalcommons.njit.edu/cgi/viewcontent.cgi?article=2032&context=theses |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
