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Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis(diethylamino)silane and ozone
| Content Provider | Semantic Scholar |
|---|---|
| Author | Maruyama, Toshiro Ohtani, Satoshi |
| Copyright Year | 1993 |
| Abstract | Silicon dioxide thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw materials were tetrakis(diethylamino)silane and ozone in oxygen gas. The amorphous films were obtained at a substrate temperature above 200 °C. The films were superior in chemical stability and hardness to the films which were prepared from tetraethoxysilane and ozone. |
| Starting Page | 2800 |
| Ending Page | 2802 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.111429 |
| Alternate Webpage(s) | https://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/43525/1/ApplPhysLett_63_611.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.111429 |
| Volume Number | 64 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |