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Nonvolatile Memory Device Using the Resistive Switching of Graphene Oxde and the Fabrication Method Thereof Cross-reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Sang Wuk |
| Copyright Year | 2017 |
| Abstract | (51) Int. Cl. (75) Inventors: Sang Wuk Lee, Seoul (KR); Tae HOIL 45/00 (2006.01) Won Kang, Seoul (KR); Gennady HOIL 2/8239 (2006.01) Panin, Seoul (KR), Olesya B82Y 99/00 (2011.01) Kapitanova, Seoul (KR) (52) U.S. Cl. ..................... 257/2; 438/382: 257/E45.001; 977/734; 257/E21.645; 257/E21.004 (73) Assignee: Dongguk University (57) ABSTRACT Industry-Academic Cooperation Foundation, Seoul (KR) Disclosed are an oxide-based nonvolatile memory with Supe rior resistive Switching characteristics and a method for pre paring the same. More particularly, the disclosure relates to a (21) Appl. No.: 13/280,818 nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for pre (22) Filed: Oct. 25, 2011 paring the same. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/a3/70/35/59278177ad8d2a/US20120205606A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |