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Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhang, Xin-Wen Wu, Zhaoxin Wang, Dawei Wang, Dongdong He, Runlin |
| Copyright Year | 2010 |
| Abstract | We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably. |
| Starting Page | 4468 |
| Ending Page | 4472 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.apsusc.2010.01.076 |
| Volume Number | 256 |
| Alternate Webpage(s) | http://www.gr.xjtu.edu.cn/c/document_library/get_file?folderId=2418869&name=DLFE-87067.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.apsusc.2010.01.076 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
