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Doped organic light emitting diodes having a 650-nm-thick hole transport layer
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yamamori, Asuka Adachi, Chihaya Koyama, Toshiki Taniguchi, Yoshio |
| Copyright Year | 1998 |
| Abstract | We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is composed of a hole transporting polycarbonate polymer (PC-TPB-DEG) and tris(4-bromophenyl)aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showed considerable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency ΦL was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004 cd/m2 at 10.0 V and 220 mA/cm2. |
| Starting Page | 2147 |
| Ending Page | 2149 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.121304 |
| Volume Number | 72 |
| Alternate Webpage(s) | https://catalog.lib.kyushu-u.ac.jp/opac_download_md/19443/85.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.121304 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
