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Spacer layer thickness dependence of CPP-GMR effects in Co 2 (Fe-Mn)Si/ L 1 2 -Ag-Mg/Co 2 (Fe-Mn)Si devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ina, Yusuke Kubota, Takahide Takanashi, Koki |
| Copyright Year | 2016 |
| Abstract | Introduction: Current perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices are of interests for applying reading head of hard disk drives (HDDs). CPP-GMR devices with low resistance-area product (RA) and high magnetoresistance (MR) ratio are required for the future HDD applications [1]. We previously reported ΔRA value of 17 mm in the CPP-GMR devices using a Ag83Mg17 spacer layer with partial L12-ordering and Co2Fe0.4Mn0.6Si (CFMS) electrodes, which was larger than that of the conventional devices with a Ag spacer layer [2]. In this work, we prepared a well ordered L12 Ag78Mg22 spacer layer for the CFMS/Ag-Mg/CFMS devices and investigated the spacer layer thickness dependence of CPP-GMR effects. Experimental: A stacking structure of the samples was; MgO (100) sub./Cr (20 nm)/Ag (40 nm)/CFMS (20 nm)/Ag78Mg22 (t nm)/CFMS (7 nm)/Ag (2 nm)/Au (5 nm). All layers were deposited at room temperature, and in situ post-annealing was performed at 650oC and 500oC, after the depositions of Cr and the upper CFMS layers, respectively. The thicknesses of the Ag78Mg22 spacer layer, t, were 2, 3, and 5 nm. The crystal structure was characterized using reflection high energy electron diffraction (RHEED) technique. MR effects were measured by direct current four-terminal method at room temperature. Results: In situ RHEED observation was performed for the top CFMS surface, and the epitaxial growth and the L21-ordering of the CFMS were confirmed regardless of the spacer layer thickness. RA values of the CPP-devices were determined from the plots of the junction resistances at the parallel magnetization configuration (Rp) as a function of the inverse junction area (1/A). RA values and MR ratios increased with the spacer layer thickness. The maximum values of MR ratio and ΔRA were 56% and 20 mm for t = 5 nm. CPP-GMR effects of the devices with thicker spacer layer are to be discussed at the presentation. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/jsap2016s/19p-P1-60/public/pdf?type=in |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
