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Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Su, Yan Kuin Chang, Sun Joseph Hung, Shang Chao Chang, Chen Shiung Wu, Liang |
| Copyright Year | 2004 |
| Abstract | InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal- organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10 nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases. |
| Starting Page | 486 |
| Ending Page | 488 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1049/ip-cds:20040997 |
| Alternate Webpage(s) | http://www.kyu.edu.tw/93/epaperv6/93-023.pdf |
| Alternate Webpage(s) | https://doi.org/10.1049/ip-cds%3A20040997 |
| Volume Number | 151 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |