Loading...
Please wait, while we are loading the content...
Similar Documents
SiO2 ETCH RATE AND PROFILE CONTROL USING PULSE POWER IN CAPACITIVELY COUPLED PLASMAS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Song, Sang-Heon Kushner, Mark J. |
| Copyright Year | 2011 |
| Abstract | Pulsed capacitively coupled plasma (CCPs) are attractive for controlling electron energy distributions, f(), and plasma properties for microelectronics fabrication. In these systems, f() can be controlled through choice of the pulse repetition frequency (PRF) and duty cycle as these determine the relative role of overshoot of E/N and electron thermalization. As a result, the fluxes to the wafer can also be controlled with these parameters. The etch properties during pulsed-operation may be controllably different than with continuous wave (CW) excited plasma. In this paper, we present computed results of time resolved f() during a pulse period and etch properties in fluorocarbon gas mixtures. We found that the f() and the ratio of fluxes to the wafer are controllable by PRF and duty cycle in a manner not otherwise attainable using CW excitation. The tail of the f() is enhanced with lower PRF in order to compensate for electron losses during the longer inter pulse period. As a result of different dissociation patterns of feed stock gases by the modulated f(), F, O and polymer fluxes increase relative to ion fluxes with decreasing PRF and duty cycle. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.ispc-conference.org/ispcproc/ispc20/393.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
