Loading...
Please wait, while we are loading the content...
Similar Documents
Characterization of $SiO_{2}$ Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas
| Content Provider | MDPI |
|---|---|
| Author | Cho, Chul Hee You, Kwangho Kim, Sijun Lee, Youngseok Lee, Jang Jae You, Shinjae |
| Copyright Year | 2021 |
| Description | Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, $SiO_{2}$ etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of $SiO_{2}$ etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators. |
| Starting Page | 5036 |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma14175036 |
| Journal | Materials |
| Issue Number | 17 |
| Volume Number | 14 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-03 |
| Access Restriction | Open |
| Subject Keyword | Materials Silicon Dioxide Etching Liquid Fluorocarbon Precursor Global Warming Potential (gwp) Etch Selectivity Capacitively Coupled Plasma Pulse-modulated Plasma |
| Content Type | Text |
| Resource Type | Article |
