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Forward body bias for microprocessors in 130nm technology generation and beyond
| Content Provider | Semantic Scholar |
|---|---|
| Author | Keshavarzi, Ahmad Narendra, S. Bloechel, B. Borkar, Shekhar Y. De, Van Raemdonck |
| Copyright Year | 2002 |
| Abstract | Device and test chip measurements show that forward body bias (FBB) can be used effectively to improve performance and reduce complexity of a 130nm dual-V/sub T/ technology, reduce leakage power during burn-in and standby, improve circuit delay and robustness, and reduce active power. FBB allows performance advantages of low temperature operation to be realized fully without requiring transistor redesign, and also improves V/sub T/ variations, mismatch, and g/sub m/ /spl times/ r/sub 0/ product. |
| Starting Page | 312 |
| Ending Page | 315 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/JSSC.2003.810054 |
| Alternate Webpage(s) | http://www.vlsisymposium.org/Past/02web/circuits/cir_pdf/C22p2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/JSSC.2003.810054 |
| Journal | 2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302) |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
