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Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Prudaev, Ilya A. Sarkisov, Sergey Yu. Tolbanov, Oleg P. Kosobutsky, Alexey V. |
| Copyright Year | 2015 |
| Abstract | , Phone: þ73 822 413 636, Fax: þ73 822 413 636In this paper the results of experiments on terahertz generationfrom nitride light-emitting diode heterostructures under two-photon excitation by femtosecond laser pulses are reported.Dependencies of the photoluminescence and terahertz spectraon structural properties of the samples and intensity of laserpulses have been studied. It was found that the terahertz pulseamplitude increases and its spectrum shifts towards higherfrequencies with an increasing number of quantum wells in theheterostructures. Photoluminescence spectral shape change athigh excitation intensities was observed. The probablemechanisms explaining the observed experimental dependen-cies are discussed. |
| Starting Page | 946 |
| Ending Page | 951 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/pssb.201451497 |
| Volume Number | 252 |
| Alternate Webpage(s) | http://vital.lib.tsu.ru/vital/access/services/Download/vtls:000534661/SOURCE1 |
| Alternate Webpage(s) | https://doi.org/10.1002/pssb.201451497 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |