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Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Godlewski, Marek Wójtowicz, Tomasz Karczewski, Grzegorz Kossut, Jacek Bergman, Jeffrey P. Holtz, Per-Olof Monemar, Bo |
| Copyright Year | 1997 |
| Abstract | The CdTe/CdMnTe structures studied were grown by molecular beam epitaxy on (001) GaAs substrate covered with the ZnTe/CdZnTe (10/20 nm) superlattice and then with 3.5 μm thick CdTe buffer layer. The active part of the structure consisted of 60 periods of 4 nm wide CdTe (well)/13 nm wide CdMnTe (20% Mn fraction, barrier). The first 10 periods were undoped. The following 50 periods were δ-doped with indium to the level of 4 x 10 10 cm-2 either in the middle of the QW (sample #1), or in the middle of the barrier (sample #2) or both in the middle of the QW and the barrier (sample #3). |
| Starting Page | 765 |
| Ending Page | 768 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.12693/APhysPolA.92.765 |
| Alternate Webpage(s) | http://przyrbwn.icm.edu.pl/APP/PDF/92/a092z4p26.pdf |
| Alternate Webpage(s) | https://doi.org/10.12693/APhysPolA.92.765 |
| Volume Number | 92 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
