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Thermal excitation effects of photoluminescence of annealed GaInNAs∕GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy
Content Provider | Semantic Scholar |
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Author | Wang, Sheng Yoon, Soon Fatt Fan, Weijun Yuan, Shu Guang |
Copyright Year | 2005 |
Abstract | GaInNAs∕GaAs quantum well laser structures have been grown by plasma-assisted molecular beam epitaxy. Rapid thermal annealing was applied to suppress the nitrogen-related localized states in the material. These nitrogen-related localized states significantly quench the photoluminescence due to its low radiative recombination efficiency, compared to band-to-band transitions. Further, the thermal excitation processes of carriers from localized states to extended states result in the high temperature-sensitivity of light emission, which may lead to a low characteristic temperature if such structures are used in a laser diode. Our experiments have shown that annealing at 760°C for 120s is insufficient to totally eliminate the nitrogen-related localized states, which may require a higher temperature anneal process. |
Starting Page | 1434 |
Ending Page | 1440 |
Page Count | 7 |
File Format | PDF HTM / HTML |
DOI | 10.1116/1.1935533 |
Volume Number | 23 |
Alternate Webpage(s) | http://www.ausinkong.org/backend/wp-content/uploads/theyuans/Publications/JVST2005PLInGaAaNMBEWangShanZhong.pdf |
Alternate Webpage(s) | https://doi.org/10.1116/1.1935533 |
Language | English |
Access Restriction | Open |
Content Type | Text |
Resource Type | Article |