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104.Intelligent Temperature Compensation of Pressure Sensor Based on MEMS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lu, Jianqing |
| Copyright Year | 2017 |
| Abstract | With the development of information technology, it is impossible to obtain information via sensors. The pressure sensor is manufactured through the piezoresistive effect of semiconductors using micromachining process, high sensitivity, compact, widely used in various fields. However, the pressure sensor is susceptible to temperature drift due to the characteristics of semiconductor materials and the effect of the micro-processing process, resulting in deviation of the measurement accuracy. Therefore, intelligent pressure sensor temperature compensation is required to compensate for the temperature drift. This paper performed empirical research on intelligent pressure sensor temperature compensation scheme based on Micro-Electro-Mechanical-System (MEMS) technology taking the silicon pressure sensor as example. |
| File Format | PDF HTM / HTML |
| Volume Number | 32 |
| Alternate Webpage(s) | http://www.revistadelafacultaddeingenieria.com/index.php/ingenieria/article/download/2753/2712 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |