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Estimation of Charge-Injection Barriers at the Metal/Pentacene Interface through Accumulated Charge Measurement
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kadoya, Tomofumi Otsuka, Masato Ogino, Akinari Sato, Seiichi Yokomatsu, Tokuji Maenaka, Kazusuke Yamada, Jun-Ichi Tajima, Hiroyuki |
| Copyright Year | 2017 |
| Abstract | The charge-injection barrier from metal electrodes to thin-film pentacene is investigated using accumulated charge measurements. When a gold electrode is deposited on a pentacene film, the interface forms a Schottky contact with a hole-injection barrier of 0.2 eV. However, interfacial carrier motion is reversible between charge injection and discharge. The result suggests that the reported electrical hysteresis in typical pentacene transistors is caused by carrier traps that are localized primarily in the SiO2/pentacene interface. The Ag/pentacene junction has a large barrier height of 0.5 eV. The barrier height is significantly reduced, and an Ohmic contact is realized by using molybdenum oxide (MoO3) as a buffer layer. |
| Starting Page | 2888 |
| Ending Page | 2888 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1021/acs.jpcc.6b12215 |
| Volume Number | 121 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/jsap2017s/16a-302-7/public/pdf?type=in |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
