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Band-Alignment Induced Current Modulation in Bi 2 Se 3 Topological Insulator
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gupta, Govind Jalil, M.b.a. Liang, Gengchiau |
| Copyright Year | 2014 |
| Abstract | Band alignment induced current modulation in Bi2Se3 three-dimensional (3D) topological insulator (TI) slab has been investigated by quantum transport simulations, implemented through Non-Equilibrium Green Function (NEGF) formalism, to examine the possibility of a 3D-TI based resonant device for future spintronic oscillators and analog multipliers. It is observed that maximum current flows when the Dirac-points (bands) are in resonance. However, On/Off ratio is found to be relatively small and strong temperature dependence is also noticed. The physical insights for these observations have been posited along with the suggestions for attaining close to ideal operation. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2014.H-3-2 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2014/H-3-2/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2014.H-3-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |