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Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
Content Provider | Semantic Scholar |
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Author | Rossmann, Harald R. Gysin, Urs Bubendorf, Alexander Glatzel, Thilo Reshanov, Sergey A. Zhang, Andy Schöner, Adolf Jung, Thomas A. Meyer, Ernst Bartolf, Holger |
Copyright Year | 2016 |
Abstract | The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques s쳮ded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities. |
Starting Page | 497 |
Ending Page | 500 |
Page Count | 4 |
File Format | PDF HTM / HTML |
DOI | 10.4028/www.scientific.net/MSF.858.497 |
Volume Number | 858 |
Alternate Webpage(s) | https://nanolino.unibas.ch/publication_files/6469de47b3636ada23ee158035c34560.pdf |
Alternate Webpage(s) | https://doi.org/10.4028/www.scientific.net%2FMSF.858.497 |
Language | English |
Access Restriction | Open |
Content Type | Text |
Resource Type | Article |