Loading...
Please wait, while we are loading the content...
Similar Documents
CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode
| Content Provider | Semantic Scholar |
|---|---|
| Author | Martin, Richard D. Forouhar, Siamak Lang, Robert J. Hunsperger, Robert G. Tiberio, Richard C. Chapman, Peter F. |
| Copyright Year | 1995 |
| Abstract | Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etched along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8 cm/sup -1/ was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity. > |
| Starting Page | 244 |
| Ending Page | 246 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/68.372734 |
| Volume Number | 7 |
| Alternate Webpage(s) | https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19970003045.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/68.372734 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
