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An ingaas-gaas-aigaas laterally-coupled distributed feedback (lc-dfb) ridge laser diode.
| Content Provider | CiteSeerX |
|---|---|
| Author | Martin, R. D. Forouhar, S. Chapman, P. F. Keo, S. Lang, R. J. Hunsperger, R. G. Tiberio, R. C. |
| Abstract | Introduction: Stable single-mode distributed feedback laser sources important in many applications including spectroscopy, pump sources for amplifiers and solid-state lasers, and use in coherent communication systems. DFBs achieve wavelength selectivity through feedback from a periodic change in index or gain cavity. This usually requires an interrupted growth - i.e. regrowth over a grating structure - in the fabrication, which is time consuming and can introduce defects at the grating/regrowth interface. Determining the proper surface preparation and growth parameters to achieve high quality regrowth preserving the structure is technically demanding - particularly for short wavelength devices with high Al content and long wavelength GaSb based devices. One way to eliminate the regrowth problem is to etch the gratings the cavity has been fabricated and rely on the coupling of the evanescent electromagnetic fields. This has been |
| File Format | |
| Access Restriction | Open |
| Content Type | Text |
