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Direct observation of Friedel oscillations around incorporated sie, dopants in GaAs by low-temperature scanning tunneling microscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wielen, M. C. M. M. Van Der Roij, A. Van Kempen, Herman Van |
| Copyright Year | 1996 |
| Abstract | We report the direct imaging of electrically active Si dopants near the GaAs(110) surface with a scanning tunneling microscope at a temperature of 4.2 K. In the filled state images, we observe patterns of rings which are centered around the individual doping atoms. We believe these ring patterns are induced by the individual impurities, which, due to their charge, disturb the local potential and cause oscillations in the charge density, also called Friedel oscillations. In the empty state images no Friedel oscillations can be observed. |
| Starting Page | 1075 |
| Ending Page | 1078 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevLett.76.1075 |
| Volume Number | 76 |
| Alternate Webpage(s) | https://repository.ubn.ru.nl/bitstream/handle/2066/28500/28500.pdf?sequence=1 |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevLett.76.1075 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
