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Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Feenstra Woodall Pettit |
| Copyright Year | 1993 |
| Abstract | The scanning tunneling microscope is used to study arsenic-related point defects in low-temperature-grown GaAs. Tunneling spectroscopy reveals a band of donor states located near E υ >+0.5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolated arsenic antisite defect (As on a Ga site) in a tetrahedral environment |
| Starting Page | 1176 |
| Ending Page | 1179 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevLett.71.1176 |
| Alternate Webpage(s) | http://woodall.ece.ucdavis.edu/wp-content/uploads/sites/84/2016/02/feenstra1993.pdf |
| PubMed reference number | 10055469 |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevLett.71.1176 |
| Journal | Medline |
| Volume Number | 71 |
| Issue Number | 8 |
| Journal | Physical review letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |