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Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
Article
Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
Article
Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
| Content Provider | Semantic Scholar |
|---|---|
| Author | Duan, Huigao Winston, Donald Yang, Joel K. W. Cord, Bryan M. Manfrinato, Vitor Riseti Berggren, Karl K. |
| Copyright Year | 2010 |
| Abstract | Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane (HSQ) and calixarene were the only two reported negative resists that could approach sub-10-nm half-pitch resolution for electron-beam lithography. Here, the authors report that 10-nm half-pitch dense nanostructures can also be readily fabricated using the well known poly(methyl methacrylate) (PMMA) resist operating in negative tone, even at exposure energies as low as 2 keV. In addition to scanning electron microscopy metrology, transmission electron microscopy metrology was done to confirm the high-resolution capability of negative-tone PMMA. This process was compared to HSQ with salty development and showed similar ultimate resolution, so it could be used as an alternative for applications incompatible with HSQ. |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.3501353 |
| Volume Number | 28 |
| Alternate Webpage(s) | http://dspace.mit.edu/openaccess-disseminate/1721.1/73447 |
| Alternate Webpage(s) | http://www.rle.mit.edu/qnn/documents/duan-5-2010-80.pdf |
| Alternate Webpage(s) | https://dspace.mit.edu/bitstream/handle/1721.1/73447/Berggren-Sub-10-nm%20half-pitch.pdf?isAllowed=y&sequence=2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
