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Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yang, Joel K. W. Cord, Bryan M. Duan, Huigao Berggren, Karl K. Klingfus, Joseph Nam, Sung-Wook Rooks, Michael J. |
| Copyright Year | 2009 |
| Abstract | The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution. |
| Starting Page | 2622 |
| Ending Page | 2627 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.3253652 |
| Alternate Webpage(s) | http://dspace.mit.edu/openaccess-disseminate/1721.1/73050 |
| Alternate Webpage(s) | http://dspace.mit.edu/bitstream/handle/1721.1/73050/Berggren-Understanding%20of%20hydrogen.pdf;jsessionid=644C9DB58D77E3AB944F119387141E2D?sequence=1 |
| Alternate Webpage(s) | http://www.rle.mit.edu/qnn/documents/yang-3-2009-66.pdf |
| Alternate Webpage(s) | https://dspace.mit.edu/openaccess-disseminate/1721.1/73050 |
| Alternate Webpage(s) | https://doi.org/10.1116/1.3253652 |
| Volume Number | 27 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
