NDLI: Large Area n-Type Silicon Solar Cells with Selective Front Surface Field and Screen Printed Aluminum-Alloyed Rear Emitter

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Large Area n-Type Silicon Solar Cells with Selective Front Surface Field and Screen Printed Aluminum-Alloyed Rear Emitter

Content Provider	Semantic Scholar
Author	Wiedenmann, Thomas Dastgheib-Shirazi, Amir Raabe, Bernd Hahn, Giso
Copyright Year	2010
Abstract	Large area n-type silicon solar cells with a screen-printed aluminum rear side emitter are mainly limited by their front surface recombination velocity. In order to overcome this limitation, we use an industrially applicable etch-back process to create a selective front surface field (s-FSF). This process was developed for the formation of a single diffusion selective emitter on p-type silicon; it generates a deep doping profile with a low surface concentration which results in an excellent emitter saturation current and a highest independently confirmed stable cell efficiency of 18.7% on 5” p-type Cz silicon. In this work we focus on the applicability of this process to n-type silicon. 6” solar cells with different front side etchback depths have been processed from n-type silicon leading to a highest efficiency of 18.5% for a s-FSF cell and an average gain of 0.8%abs compared to cells with a homogeneous FSF. We furthermore investigate the quality of the etch-back FSF and the screen printed alloyed emitter from different pastes by QSSPC measurements.
Starting Page	1465
Ending Page	1468
Page Count	4
File Format	PDF HTM / HTML
DOI	10.4229/25thEUPVSEC2010-2DO.2.6
Alternate Webpage(s)	https://www.hahn.uni-konstanz.de/typo3temp/secure_downloads/80509/0/d632b0aeb81288c1e5a250be8eddff838281893a/2DO.2.6_Book_preprint.pdf
Alternate Webpage(s)	https://kops.uni-konstanz.de/bitstream/handle/123456789/16017/Book_160178.pdf?isAllowed=y&sequence=2
Alternate Webpage(s)	https://doi.org/10.4229/25thEUPVSEC2010-2DO.2.6
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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