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Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mancini, David P. Gehoski, K. Ainley, Eric S. Nordquist, Kevin J. Resnick, Douglas Jeffrey Bailey, Todd C. Sreenivasan, S. V. Ekerdt, John G. Willson, C. Grant |
| Copyright Year | 2002 |
| Abstract | The feasibility of using hydrogen silsesquioxane (HSQ) to directly pattern the relief layer of step and flash imprint lithography (SFIL) templates has been successfully demonstrated. HSQ is a spin-coatable oxide, which is capable of high resolution electron-beam lithography. Negative acting and nonchemically amplified, HSQ has moderate electron-beam sensitivity and excellent processing latitude. In this novel approach, 6 ×6 × 0.25 in.3 quartz photomask substrates are coated with a 60 nm indium tin oxide (ITO) charge dissipation layer and directly electron-beam written using a 100 nm film of HSQ. Direct patterning of an oxide relief layer eliminates the problems of critical dimension control associated with both chromium and oxide etches, both required processes of previous template fabrication schemes. Resolution of isolated and semidense lines of 30 nm has been demonstrated on imprinted wafers using this type of template. During this evaluation, a failure of the release layer to provide a durable nonstic... |
| Starting Page | 2896 |
| Ending Page | 2901 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.1515311 |
| Volume Number | 20 |
| Alternate Webpage(s) | http://willson.cm.utexas.edu/Research/Sub_Files/SFIL/Publications/2002/Mancini%20et%20al%202002.pdf |
| Alternate Webpage(s) | http://cnt.canon.com/wp-content/uploads/2014/11/JVSTB-2002-HSQ-direct-patterning-of-templates.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.1515311 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
