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Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Abbate, Carmine Busatto, Giovanni Cascio, Alessandra Curró, Gina Iannuzzo, Francesco Sanseverino, Annunziata Velardi, Francesco Mattiazzo, Serena Tessaro, M. Silvestrin, L. |
| Copyright Year | 2013 |
| Abstract | Silicon Carbide power devices are becoming very popular devices in switching power converters due to their superior performances in terms of on state and switching energy losses with respect to the Silicon counterparts [1]. Some works have been dedicated to study Single Event Effects (SEEs) induced by irradiations in SiC power diodes [2-5] and MESFETs [6]. Total IonizationDose Effects, TID, have been studied on SiC BJTs [7] and power MOSFETs [8]. To the authors’ knowledge, SEEs induced by heavy ion irradiation have not been studied on SiC power MOSFETs, so far. The object of this paper is to present the study of SEEs induced by heavy ion irradiation on commercial SiC power MOSFETs rated at 1200V-20A. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.lnl.infn.it/~annrep/read_ar/2012/contributions/pdfs/080_C_75_C49.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
