NDLI: Time-dependent Dielectric Breakdown in poly-Si CVD Hf 02 Gate Stack

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Time-dependent Dielectric Breakdown in poly-Si CVD Hf 02 Gate Stack

Content Provider	Semantic Scholar
Author	Lee, Joon Kiong Lee, Chung Hwan Choi, Chi Hoon Kwong, D. L.
Copyright Year	2004
Abstract	In this paper, we present a comprehensive study on long-term reliability of CVD HA), gate stacks with n+-poly-Si gate electrodes. The area dependence and temperature acceleration (Z5-150°C) of TDDB, defect generation rate, and critical defect density of CVD HA), gate stacks are studied. Results show that IO year lifetime of Hm,/ n+-poly-Si gate stack (EOT=14.5.&) is projected for Vg=-Z.OV @25"C and Vg=-l.56V @150°C. This excellent reliability characteristics of H Q gate stack is mainly attributed to the thicker physical thickness of HA),, resulting in significant reduction of tunneling leakage current by a factor of 10'-104 while maintaining comparable Weibull slope factor. In addition, the critical defect density of H Q gate stack is comparable to SiO, with similar physical thickness. However, considering the cumulative impact of temperature acceleration at 15O"C, scaling of an effective gate oxide area of 0.1cm2 and a maximum allowed fraction of failures of O.Ol%, the maximum allowed operating voltage is projected to he only -0.85V for HtO2/poly-Si gate stack with EOT=14.5.&.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://www.cs.utexas.edu/~hestness/papers/lee-tddb_high-k.pdf
Language	English
Access Restriction	Open
Subject Keyword	Cardiovascular Diseases Chemical vapor deposition Entamoeba histolytica Ab:Titr:Pt:Ser:Qn:HA Equivalent oxide thickness Extravasation Gate oxide IBM Notes Image scaling International System of Units Nephrogenic Systemic Fibrosis Poly A Projections and Predictions SIO (software) Small-outline transistor Software bug Spectral leakage Test scaling Thickness (graph theory) Tunneling protocol electrode poly ICLC voltage
Content Type	Text
Resource Type	Article

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