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Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current
| Content Provider | Semantic Scholar |
|---|---|
| Author | Koh, Meishoku Mizubayashi, Wataru Iwamoto, Kunihiko Murakami, Hideki Ono, Tsuyoshi Tsuno, Morikazu Mihara, Tatsuyoshi Shibahara, Kentaro Miyazaki, Seiichi Hirose, Masataka |
| Copyright Year | 2001 |
| Abstract | We report on a new roadblock which will limit the gate oxide thickness scaling of MOSFETs. It is found that statistical distribution of direct tunnel leakage current through 1.2 to 2.8 nm thick gate oxides induces significant fluctuations in the threshold voltage and transconductance when the gate oxide tunnel resistance becomes comparable to gate poly-Si resistance. By calculating the measured tunnel current based on multiple scattering theory, it is shown that the device characteristics fluctuations will be problematic when the gate oxide thickness is scaled down to less than 1 nm. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.rcns.hiroshima-u.ac.jp/shiba/pdf-files/ed2001feb-m.pdf |
| Alternate Webpage(s) | http://www.rnbs.hiroshima-u.ac.jp/shiba/pdf-files/ed2001feb-m.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Extravasation Gate oxide Image scaling Multiple scattering theory Oxides Poly A Quantum fluctuation Spectral leakage Test scaling Thickness (graph theory) poly ICLC voltage |
| Content Type | Text |
| Resource Type | Article |
