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Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kishida, Ryo Kobayashi, Kazutoshi |
| Copyright Year | 2016 |
| Abstract | Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases carriers in channel when gate voltage is constant. Degradation rate of NBTI decreases by 23% and degradation factor decreases by 29% when RBB is applied from 0 to 1.0 V. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2016/PS-3-08/public/pdf_archive?type=in |
| Alternate Webpage(s) | http://www-vlsi.es.kit.ac.jp/thesis/papers/pdfs/SSDM_2016_kishida.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
