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Current rectification by a single ZnS nanorod probed using a scanning tunneling microscopic technique
| Content Provider | Semantic Scholar |
|---|---|
| Author | Thupakula, Umamahesh Bal, Jayanta Kumar Dalui, Amit Debangshi, Anupam Sarma, D. D. Acharya, Somobrata |
| Copyright Year | 2014 |
| Abstract | We report on the rectification properties from a single ZnS nanorod measured using the UHV-SPM technique. The rectification behavior is evidenced from the current–voltage characteristics measured on a single ZnS nanorod. We propose a tunneling mechanism where the direct tunneling mechanism is dominant at lower applied bias voltages followed by resonant tunneling through discrete energy levels of the nanorod. A further increase in the bias voltage changes the tunneling mechanism to the Fowler–Nordheim tunneling regime enabling rectification behavior. Realizing rectification from a single ZnS nanorod may provide a means of realizing a single nanorod based miniaturized device. |
| Starting Page | 1158 |
| Ending Page | 1164 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1039/C3TC31850H |
| Volume Number | 2 |
| Alternate Webpage(s) | http://www.rsc.org/suppdata/tc/c3/c3tc31850h/c3tc31850h.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
