Current Rectification By A Single ZnS Nanorod Probed Using A Scanning Tunneling Microscopic Technique

Content Provider	Indian Institute of Science (IISc)
Author	Thupakula, Umamahesh Bal, Jayanta K. Dalui, Amit Debangshi, Anupam Sarma, D. D. Acharya, Somobrata
Copyright Year	2014
Abstract	We report on the rectification properties from a single ZnS nanorod measured using the UHV-SPM technique. The rectification behavior is evidenced from the current-voltage characteristics measured on a single ZnS nanorod. We propose a tunneling mechanism where the direct tunneling mechanism is dominant at lower applied bias voltages followed by resonant tunneling through discrete energy levels of the nanorod. A further increase in the bias voltage changes the tunneling mechanism to the Fowler-Nordheim tunneling regime enabling rectification behavior. Realizing rectification from a single ZnS nanorod may provide a means of realizing a single nanorod based miniaturized device.
File Format	PDF
Journal	PeerReviewed
Language	English
Publisher	ROYAL SOC CHEMISTRY
Publisher Date	2014-01-01
Access Restriction	Authorized
Subject Keyword	Solid State & Structural Chemistry Unit
Content Type	Text
Resource Type	Article