Loading...
Please wait, while we are loading the content...
Similar Documents
Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shul, Randy John Zhang, Liping Willison, C. G. Pearton, Stephen J. Junshik Abernathy, Cammy Renée Lester |
| Copyright Year | 1999 |
| Abstract | Patterning the group-111 nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1 .O pdmin) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl,/Cl, pl%sma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Mmin making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl,/Cl, flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7: 1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic C1 which was monitored using optical emission spectroscopy (OES). |
| Starting Page | 823 |
| Ending Page | 833 |
| Page Count | 11 |
| File Format | PDF HTM / HTML |
| DOI | 10.1557/s1092578300003483 |
| Volume Number | 4 |
| Alternate Webpage(s) | https://digital.library.unt.edu/ark:/67531/metadc672964/m2/1/high_res_d/2249.pdf |
| Alternate Webpage(s) | https://doi.org/10.1557/s1092578300003483 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
